IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v14y2007i02ns0218625x07009360.html
   My bibliography  Save this article

EFFECTS OFLaDOPING ON FERROELECTRIC PROPERTIES OFCaBi4Ti4O15THIN FILMS

Author

Listed:
  • YANXIA DING

    (School of Materials Science and Engineering, University of Jinan, Jinan 250022, China)

  • GUANGDA HU

    (School of Materials Science and Engineering, University of Jinan, Jinan 250022, China)

  • SUHUA FAN

    (College of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China)

Abstract

LamodifiedCBTi(CLBTi) thin films were prepared onPt/Ti/SiO2/Si(100)substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase ofCLBTithin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of2Pras well as a decrease of2Ecwith the increase ofLaconcentration were observed. The leakage properties ofCBTithin films were found to be improved by theLadoping. The results were discussed with respect to the effects ofLa3+substitution at perovskite A-site.

Suggested Citation

  • Yanxia Ding & Guangda Hu & Suhua Fan, 2007. "EFFECTS OFLaDOPING ON FERROELECTRIC PROPERTIES OFCaBi4Ti4O15THIN FILMS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(02), pages 277-281.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:02:n:s0218625x07009360
    DOI: 10.1142/S0218625X07009360
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X07009360
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X07009360?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:14:y:2007:i:02:n:s0218625x07009360. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.