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Magnetoresistance Effect In A Magnetic–Electric-Barrier Structure

Author

Listed:
  • CHUN-SHU LI

    (Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China)

  • YONG-HONG KONG

    (Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China)

  • WEI-HUA TANG

    (Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China)

  • GUI-LIAN ZHANG

    (Department of Electronic Engineering and Physics, Hunan University of Science and Engineering, Yongzhou, Hunan 425100, People's Republic of China)

Abstract

A Magnetoresistance device is proposed in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic and semiconductor systems, and this system may be used as a voltage-tunable magnetoresistance device.

Suggested Citation

  • Chun-Shu Li & Yong-Hong Kong & Wei-Hua Tang & Gui-Lian Zhang, 2007. "Magnetoresistance Effect In A Magnetic–Electric-Barrier Structure," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(02), pages 255-260.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:02:n:s0218625x07009335
    DOI: 10.1142/S0218625X07009335
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