IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v14y2007i01ns0218625x07009050.html
   My bibliography  Save this article

Surface Structures On Cleaved Silicon By Cleavage Luminescence Detection

Author

Listed:
  • DONGGUANG LI

    (Edith Cowan University, Mt Lawley, Western Australia 6050, Australia)

Abstract

This paper reports on further research into the structure and properties of the cleaved surfaces of silicon, using vacuum cleavage luminescence detection methods.Results show resistance partially recovers during the cleavage process through "crack healing". When the elasticity of the parts transmitting the applied stress temporarily absorbs the initial rupture stress, the crack stops and partially re-closes until the applied force "catches up" and reapplies stress. The high resistance created by the two Schottky barriers prevents resistance recovery from mere surfaces re-contact. Instead, resistance recovery from the atom-to-atom re-closure surface healing is more likely, as expected from a Three Bond Scission Model (TBS) silicon surface structure.

Suggested Citation

  • Dongguang Li, 2007. "Surface Structures On Cleaved Silicon By Cleavage Luminescence Detection," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(01), pages 101-110.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:01:n:s0218625x07009050
    DOI: 10.1142/S0218625X07009050
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X07009050
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X07009050?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:14:y:2007:i:01:n:s0218625x07009050. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.