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THE IR STUDY OF AMORPHOUS THIN FILMS OF MIXED OXIDESIn2O3–SnO2SYSTEM

Author

Listed:
  • M. ANWAR

    (Physics Department, Government College, Burewala, Pakistan)

  • S. A. SIDDIQI

    (Centre for Solid State Physics, University of the Punjab, Lahore, Pakistan)

  • I. M. GHAURI

    (Centre for Advanced Studies in Physics, Government College University, Lahore, Pakistan)

Abstract

The IR spectra of thin amorphous films of mixed oxidesIn2O3–SnO2system have been studied in the spectral range 4000–400 cm-1by Fourier transform infrared technique. The effects of changes in composition, film thickness, substrate temperature and annealing on the IR absorption bands are observed. A shift in frequency and intensity of the bands with varying preparation parameters and an increase in ordering at higher annealing temperatures are observed in the infrared curves. Some new peaks appear, which reveal the presence of lower valency states both inIn2O3andSnO2. The disappearance of bands at higher annealing temperatures is assigned to the removal of point defects in which oxygen plays an important role. The shift in band frequency with an increase in (i) theSncontent is attributed to the incorporation ofSn4+ions in theIn2O3lattice, (ii) the film thickness is attributed to the large concentration of donor centers, (iii) the substrate temperature is attributed to the increase in diffusion ofSnatoms from interstitial locations into theIncation sites, and (iv) the annealing temperature is attributed to the oxygen vacancies and indium interstitials.

Suggested Citation

  • M. Anwar & S. A. Siddiqi & I. M. Ghauri, 2007. "THE IR STUDY OF AMORPHOUS THIN FILMS OF MIXED OXIDESIn2O3–SnO2SYSTEM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(01), pages 5-16.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:01:n:s0218625x07008639
    DOI: 10.1142/S0218625X07008639
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