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The Characteristic Of As-Grown And Post-Annealed Nitrogen Doped Amorphous Carbon Thin Films Deposited By Surface Wave Microwave Plasma Enhanced Chemical Vapor Deposition Method

Author

Listed:
  • M. RUSOP

    (Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia)

  • S. ABDULLAH

    (Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia)

  • S. ADHIKARI

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

  • A. M. M. OMER

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • T. JIMBO

    (Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

Abstract

Nitrogen doped amorphous carbon(a-C:N)thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition (SWMP-CVD) technique at low temperatures (

Suggested Citation

  • M. Rusop & S. Abdullah & S. Adhikari & A. M. M. Omer & T. Soga & T. Jimbo & M. Umeno, 2006. "The Characteristic Of As-Grown And Post-Annealed Nitrogen Doped Amorphous Carbon Thin Films Deposited By Surface Wave Microwave Plasma Enhanced Chemical Vapor Deposition Method," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(05), pages 593-598.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:05:n:s0218625x06008542
    DOI: 10.1142/S0218625X06008542
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