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THE RAMAN SPECTRA CHARACTERISTICS OFa-CNxFILMS GROWN ON QUARTZ SUBSTRATES BY NEWLY DEVELOPED SURFACE WAVE MICROWAVE PECVD

Author

Listed:
  • M. RUSOP

    (Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia)

  • S. ABDULLAH

    (Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia)

  • S. ADHIKARI

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

  • A. M. M. OMER

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • T. JIMBO

    (Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan)

Abstract

Amorphous carbon nitride(a-CNx)films were deposited on quartz substrates by newly developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD) of alcohol camphoric carbon plasma source at room temperature. Then thea-CNxfilms were heat-treated at various annealing temperatures (AT) in the 100–500°C range. The effects of heat treatment on the structural modifications were studied by Visible-Raman spectroscopy through the evolution of D and G peaks. The spectral evolution observed on heat-treateda-CNxshows progressive formation of crystallites. Raman spectra have revealed the amorphous structure of as-growna-CNxfilms and the growth of nanocrystallinity upon increase of AT. These structural changes were further correlated with optical band gap and fraction of sp3bonded carbons present, derived respectively from the UV-visible and photoelectron spectroscopy. The wide range of optical absorption coefficient characteristics is observed depending on the AT. The optical band gap of as-growna-CNxfilms is found to be approximately 2.8 eV; it gradually decreases to 2.5 eV for the films heat-treated at 300°C and then it decreases rapidly to 0.9 eV at 500°C. The results obtained are discussed and compared with the literatures.

Suggested Citation

  • M. Rusop & S. Abdullah & S. Adhikari & A. M. M. Omer & T. Soga & T. Jimbo & M. Umeno, 2006. "THE RAMAN SPECTRA CHARACTERISTICS OFa-CNxFILMS GROWN ON QUARTZ SUBSTRATES BY NEWLY DEVELOPED SURFACE WAVE MICROWAVE PECVD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(05), pages 577-583.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:05:n:s0218625x06008529
    DOI: 10.1142/S0218625X06008529
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