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Growth Of Zirconium Silicate Thin Film By Pulsed-Mocvd Using Ztb And Tdeas

Author

Listed:
  • JAEHYUN KIM

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea)

  • KIJUNG YONG

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea)

Abstract

Zirconium silicate(ZrxSi1-xO2)thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200–300°C was used to deposit films with uniform thickness. The grown films showed theZr-rich composition, which is thought to induce theZr-silicide formation at the interface of the silicate andSisubstrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements.

Suggested Citation

  • Jaehyun Kim & Kijung Yong, 2006. "Growth Of Zirconium Silicate Thin Film By Pulsed-Mocvd Using Ztb And Tdeas," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(05), pages 567-571.
  • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:05:n:s0218625x06008505
    DOI: 10.1142/S0218625X06008505
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