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In Situstudies Of Epitaxial Growth By Synchrotron X-Ray Diffraction

Author

Listed:
  • WOLFGANG BRAUN

    (Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany)

  • KLAUS H. PLOOG

    (Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany)

Abstract

X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics ofGaAs(001),InAs(001)andGaSb(001)differ strongly.GaAsshows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery.GaSbexhibits dramatically different surface morphology variations during growth and recovery. Overgrowth ofGaAsby epitaxialMnAsdemonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.

Suggested Citation

  • Wolfgang Braun & Klaus H. Ploog, 2006. "In Situstudies Of Epitaxial Growth By Synchrotron X-Ray Diffraction," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(02n03), pages 155-166.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x06008256
    DOI: 10.1142/S0218625X06008256
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