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DIFFERENT GROWTH BEHAVIOR OFGe,AlANDSbON GRAPHITE

Author

Listed:
  • WENDE XIAO

    (Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore)

  • ZHIJUN YAN

    (Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
    Department of Physics, Lanzhou University, Lanzhou, P. R. China)

  • SUNIL SINGH KUSHVAHA

    (Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore)

  • MAOJIE XU

    (Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China)

  • XUE-SEN WANG

    (Department of Physics and NUS Nanoscience and Nanotechnology Initiative, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore)

Abstract

Growth ofGe,AlandSbon highly oriented pyrolytic graphite (HOPG) was systematically investigated usingin situscanning tunneling microscopy (STM). At room temperature (RT), three dimensional (3D) clusters of all three elements nucleate and grow at the step edges and defect sites of HOPG. The clusters ofAlandGeform chains, whileSbislands are mostly isolated. With further deposition at RT,Alclusters grow and coarsen into faceted islands with craters on the top (111) facets, whereas ramified single- and double-layer cluster islands are observed forGe. When deposited or annealed atT ≥ 175°C,Geforms crystallites but with randomly oriented facets. As sphericalSbislands grow beyond certain size, (111) facets appear on the top. Additionally, crystalline 2D films and 1D nanorods are observed forSbdeposited at RT. AtT ≈ 100°Cand higher flux, only the 2D and 1DSbislands are formed. These different growth behaviors reflect the unique nature in which the atoms (molecules), clusters and crystallites of each element interact with HOPG surface and with each other.

Suggested Citation

  • Wende Xiao & Zhijun Yan & Sunil Singh Kushvaha & Maojie Xu & Xue-Sen Wang, 2006. "DIFFERENT GROWTH BEHAVIOR OFGe,AlANDSbON GRAPHITE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(02n03), pages 287-296.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x06008025
    DOI: 10.1142/S0218625X06008025
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