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Structural And Photoluminescence Properties Of Porous Silicon: Effect Of Surface Passivation

Author

Listed:
  • B. NATARAJAN

    (Department of Physics, SACS MAVMM Engineering College, Madurai 625301, Tamilnadu, India)

  • V. RAMAKRISHNAN

    (Laser Laboratory, School of Physics, Madurai Kamaraj University, Madurai 625021, Tamilnadu, India)

  • V. VASU

    (Department of Physics, Madurai Kamaraj University College, Madurai 625002, Tamilnadu, India)

  • S. RAMAMURTHY

    (Department of Physics, Gandhigram Rural Institute, Gandhigram 624302, Tamilnadu, India)

Abstract

The surface passivation of porous silicon is a determining factor in the emission efficiency of the material. The hydrogen surface coverage has been shown to provide very efficient passivation. In this work, we have monitoredSi–Hnsurface coverage, which is readily-obtained porous silicon formed at 1:3 concentrations of HF: ethanol with/withoutHClcontent in the electrolytes, and relate it to the emission efficiency. SEM, FTIR and PL studies were carried out to understand the role ofHClcontent in the electrolytes. When samples are anodized withHClcontent in the electrolytes, there is a net decrease in the concentration of theSi–Hgroups on the material surface. This treatment provokes desorption of the hydrogen atoms and results in a drastic decrease in the photoluminescence.

Suggested Citation

  • B. Natarajan & V. Ramakrishnan & V. Vasu & S. Ramamurthy, 2005. "Structural And Photoluminescence Properties Of Porous Silicon: Effect Of Surface Passivation," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(04), pages 645-649.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:04:n:s0218625x05007554
    DOI: 10.1142/S0218625X05007554
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