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SUBWAVELENGTH PERIODIC RIPPLE FORMATION ONGaNSURFACE BY FEMTOSECOND LASER PULSES

Author

Listed:
  • X. C. WANG

    (Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore)

  • G. C. LIM

    (Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore)

  • F. L. NG

    (Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore)

  • W. LIU

    (Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore)

  • S. J. CHUA

    (Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore)

Abstract

The formation of femtosecond pulsed laser-induced periodic surface structure onGaNis reported for the first time (to our knowledge) in this paper. It has been found that the formation of the laser-induced ripples is very much dependent and quite sensitive to the laser conditions of the incident laser beam energy fluence and pulse numbers. Possibly due to the unique property of high-defect density ofGaNmaterial, the process window for laser-induced ripple formation is quite narrow compared to other materials such asInP,GaP,Al2O3etc. Nevertheless, through finely adjusting laser beam fluence and pulse number, subwavelength periodic ripples could be formed on theGaNsurface. The formation of such periodic two-dimensional structures was attributed to optical interference of the incident laser light with scattered waves from a surface disturbance. Photoluminescence emission could still be detected on theGaNripple area, indicating little degradation ofGaNoptical property after femtosecond laser processing. The femtosecond laser-induced ripple structure has potential applications in the fabrication of nanostructures for theGaN-based devices.

Suggested Citation

  • X. C. Wang & G. C. Lim & F. L. Ng & W. Liu & S. J. Chua, 2005. "SUBWAVELENGTH PERIODIC RIPPLE FORMATION ONGaNSURFACE BY FEMTOSECOND LASER PULSES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(04), pages 651-657.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:04:n:s0218625x05007530
    DOI: 10.1142/S0218625X05007530
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