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ZrO2-COATEDSiCNANOWIRES PREPARED BY PLASMA-ENHANCED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION

Author

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  • YOUNGJO TAK

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea)

  • KIJUNG YONG

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea)

Abstract

Plasma-enhanced atomic layer deposition (PE-ALCVD) ofZrO2was performed to coatSiCnanowires and prepare aSiC-ZrO2core-shell nanowire structure. Zirconium tertiary butoxide (ZTB) and hydrogen plasma pulse cycles were used to growZrO2films. The growth temperature ofZrO2PE-ALCVD was 150°C with a growth rate of 1.3 Å/cycle. SEM and TEM images showed uniform coating ofSiCnanowires withZrO2. The thickness ofZrO2coat layer could be controlled by the total number of the pulse cycles. After being annealed at 900°C, a polycrystalline structure ofZrO2layer was observed.

Suggested Citation

  • Youngjo Tak & Kijung Yong, 2005. "ZrO2-COATEDSiCNANOWIRES PREPARED BY PLASMA-ENHANCED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(02), pages 215-219.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:02:n:s0218625x05006962
    DOI: 10.1142/S0218625X05006962
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    Keywords

    Nanowires; core-shell nanowire; SiC; ZrO2; plasma-enhanced ALCVD;
    All these keywords.

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