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Nitrogen Doping In Camphoric Carbon Films And Its Application To Photovoltaic Cell

Author

Listed:
  • M. RUSOP

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • M. MOMINUZZAMAN

    (Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • T. JIMBO

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Chubu University, Kasugai 487-8501, Japan)

Abstract

Carbon films have been deposited on quartz and single-crystal silicon substrates by pulsed laser deposition technique. The soot for the target was obtained from burning camphor, a natural source. The effect of nitrogen (N) incorporation in camphoric carbon film is investigated. Optical gap for the undoped film is about 0.95eV. The optical gap remains unchanged for low N content and decreases to about 0.7eV. With higherNcontent, the optical gap increases. The resistivity of the carbon film increases withNcontent, initially and decreases with higherNcontent up till the film that is deposited at 30 mTorr. The results indicate successful doping for the film deposited at low nitrogen content. The J–V characteristics ofN-incorporated carbon/silicon photovoltaic cells under illumination are observed to improve uponN-incorporation in the carbon layer.

Suggested Citation

  • M. Rusop & M. Mominuzzaman & T. Soga & T. Jimbo & M. Umeno, 2005. "Nitrogen Doping In Camphoric Carbon Films And Its Application To Photovoltaic Cell," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(01), pages 35-39.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:01:n:s0218625x0500672x
    DOI: 10.1142/S0218625X0500672X
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