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CONTRIBUTION OFn-TYPE AMORPHOUS CARBON ON THE FABRICATION OFn-C:P/p-SiSOLAR CELLS

Author

Listed:
  • M. RUSOP

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • T. JIMBO

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Faculty of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

Abstract

The phosphorus dopedn-type(n-C:P)carbon films and fabrication ofn-C:P/p-Siheterojunction solid-state solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target have been studied. ThePatoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22–1.77 atomic percentages. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage(Voc)and short circuit current density(Jsc)for the cells are observed to vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm2, respectively. The cell fabricated using the target with the amount ofPby 7 weight percentages (Pwt%) shows the highest energy conversion efficiency,η=1.14%and fill factor,FF=41%. In this paper, the dependence ofPcontent on the electrical and optical properties of the depositedn-C:Pfilms and the photovoltaic characteristic of then-C:P/p-Sicells are reported.

Suggested Citation

  • M. Rusop & T. Soga & T. Jimbo & M. Umeno, 2004. "CONTRIBUTION OFn-TYPE AMORPHOUS CARBON ON THE FABRICATION OFn-C:P/p-SiSOLAR CELLS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(06), pages 569-575.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006578
    DOI: 10.1142/S0218625X04006578
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