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LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OFSiCNNANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

Author

Listed:
  • M. XU

    (Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • V. M. NG

    (Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • S. Y. HUANG

    (Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • S. Y. XU

    (Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

Abstract

Low-temperature growth ofSiCNnanoparticle films on anAlNbuffer layer onSi(100)by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation ofSiCdiffraction intensity is also observed in XRD spectra. The photoluminescence of theSiCNfilm is discussed on the base of the morphological, structural and elemental analyse.

Suggested Citation

  • M. Xu & V. M. Ng & S. Y. Huang & S. Y. Xu, 2004. "LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OFSiCNNANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(06), pages 515-519.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006566
    DOI: 10.1142/S0218625X04006566
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