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BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OFa-C:NTHIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD

Author

Listed:
  • M. RUSOP

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • S. ADHIKARI

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • A. M. M. OMER

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • S. ADHIKARY

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • H. UCHIDA

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • T. JIMBO

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

Abstract

This paper reports the band gap shifting due to nitrogen(N2)doping, microwave power and composition gas pressure of nitrogenated amorphous carbon(a-C:N)thin films deposited by newly-developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD). Results show that the optical band gap decreased from 4.1 eV to 2.4 eV corresponding to the increase ofN2doping from 0 to 5% in the gas ratio. However, further increase ofN2doping beyond 5% did not decrease the band gap. It was found that composition gas pressure and launched MW power during film deposition also largely control the optical band gap. Investigation of annealing effects on optical band gap and film thickness of theN2doped films revealed that both band gap and film thickness decrease significantly with increase of annealing temperature. The optical band gap decreased from 2.4 eV to 1.1 eV, while film thickness decreases from 320 nm to 50 nm corresponding to 200 to 400°C annealing temperature. The results revealed that the properties ofa-C:Ncan be tuned by changing the annealing temperature, composition gas pressure and microwave power of the SWMP-CVD system.

Suggested Citation

  • M. Rusop & S. Adhikari & A. M. M. Omer & S. Adhikary & H. Uchida & T. Soga & T. Jimbo & M. Umeno, 2004. "BAND GAP SHIFT DUE TO NITROGEN DOPING, COMPOSITION GAS PRESSURE AND MICROWAVE POWER OFa-C:NTHIN FILMS GROWN BY NEWLY-DEVELOPED SURFACE WAVE MICROWAVE PLASMA CVD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(06), pages 559-562.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006529
    DOI: 10.1142/S0218625X04006529
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