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The Influence Of Methane Gas Pressure On The Optical, Electrical And Structural Properties Of Nitrogenated Amorphous Carbon Films Grown By Surface Wave Microwave Plasma Chemical Vapor Deposition

Author

Listed:
  • M. RUSOP

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • A. M. M. OMER

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • S. ADHIKARI

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • S. ADHIKARY

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • H. MOKUTANI

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • N. HASEGAWA

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • S. KATO

    (Department of Electrical Engineering, Graduate School of Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • H. UCHIDA

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • T. JIMBO

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • M. UMENO

    (Department of Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan)

Abstract

The influence of methane gas(CH4)pressure on the optical, electrical and structural properties of the nitrogenated amorphous carbon nitride(a-C:N)films grown by microwave surface wave plasma chemical vapor deposition (SWP-CVD) on quartz and silicon (100) substrates have been studied. Thea-C:Nfilms are deposited with varyingCH4gas ranging from 5 to 20 ml/min. To incorporate nitrogen in the film, we have introduced nitrogen gas(N)at 5 ml/min in the chamber. The effects ofCH4gas pressure on the surface morphology, composition, structure, and electrical properties of theN-incorporated camphoric carbon thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES), UV-visible spectroscopy and four-probe resistance measurement. We have succeed in growinga-C:Nthin films using SWP-CVD at room temperature and found that the amorphous structure ofa-Cfilms can be changed and is strongly dependent on theCH4gas source.

Suggested Citation

  • M. Rusop & A. M. M. Omer & S. Adhikari & S. Adhikary & H. Mokutani & N. Hasegawa & S. Kato & H. Uchida & T. Soga & T. Jimbo & M. Umeno, 2004. "The Influence Of Methane Gas Pressure On The Optical, Electrical And Structural Properties Of Nitrogenated Amorphous Carbon Films Grown By Surface Wave Microwave Plasma Chemical Vapor Deposition," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(06), pages 553-558.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006487
    DOI: 10.1142/S0218625X04006487
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