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Growth And Characterization Of Silicon Carbide Nanowires

Author

Listed:
  • BYOUNGTAE PARK

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea)

  • YONGHWAN RYU

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea)

  • KIJUNG YONG

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang, University of Science and Technology (POSTECH), Pohang 790-784, Korea)

Abstract

A simple, direct synthesis method was used to grow the core-shellSiC-SiOxnanowires by heating theNiOcatalyzed silicon substrate. The carbothermal reduction of WO3by C provided a reductive environment to synthesize the crystallineSiCnanowires covered with theSiOxsheath in the growth temperature of 1000–1100°C. After hydrofluoric acid (HF) etching, the cubicβ-SiCnanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shellSiC-SiOxnanowires.

Suggested Citation

  • Byoungtae Park & Yonghwan Ryu & Kijung Yong, 2004. "Growth And Characterization Of Silicon Carbide Nanowires," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(04n05), pages 373-378.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:04n05:n:s0218625x04006311
    DOI: 10.1142/S0218625X04006311
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