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Surface Damage Of Crystalline Silicon By Low Fluence Femtosecond Laser Pulses

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  • Y. C. LAM

    (Singapore–MIT Alliance, Nanyang Technological University, Singapore 639798, Singapore;
    School of Mechanical and Production Engineering, Nanyang Technological University, Singapore 639798, Singapore)

  • D. V. TRAN

    (Singapore–MIT Alliance, Nanyang Technological University, Singapore 639798, Singapore)

  • H. Y. ZHENG

    (Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore)

  • V. M. MURUKESHAN

    (School of Mechanical and Production Engineering, Nanyang Technological University, Singapore 639798, Singapore)

  • J. C. CHAI

    (School of Mechanical and Production Engineering, Nanyang Technological University, Singapore 639798, Singapore)

  • D. E. HARDT

    (Singapore–MIT Alliance and Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA)

Abstract

Crystalline silicon kept at atmospheric pressure was irradiated with 775 nm multiple laser pulses of 150 fs duration at repetition rate 250 Hz. The laser pulses were circularly polarized, with a peak laser fluence of 0.03 J/cm2. We observed surface damage at a much lower fluence and lower number of pulses compared to that reported in the literature. Surface damage, cracks and pits formation were observed. The evolution of the surface damage as a function of the number of laser pulses was recorded. The observations were in contrast to the findings in the literature that the silicon surface became structured when irradiated by multiple pulses.

Suggested Citation

  • Y. C. Lam & D. V. Tran & H. Y. Zheng & V. M. Murukeshan & J. C. Chai & D. E. Hardt, 2004. "Surface Damage Of Crystalline Silicon By Low Fluence Femtosecond Laser Pulses," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(02), pages 217-221.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:02:n:s0218625x04006074
    DOI: 10.1142/S0218625X04006074
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