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(Pb, Sm)TiO3THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING ABi2Ti2O7BUFFER LAYER

Author

Listed:
  • CHANGHONG YANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • ZHUO WANG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • XIUFENG CHENG

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • HONGXIA LI

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • JIANRU HAN

    (State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China)

  • HONGLIANG YANG

    (Department of Optics, Shandong University, Jinan 250100, P. R. China)

Abstract

A thin-film bilayer structure consisting of polycrystallinePb0.85Sm0.1TiO3and preferentially (111)-orientedBi2Ti2O7were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The(Pb, Sm)TiO3/Bi2Ti2O7films in the "on" and "off" states are relatively stable.

Suggested Citation

  • Changhong Yang & Zhuo Wang & Xiufeng Cheng & Hongxia Li & Jianru Han & Hongliang Yang, 2004. "(Pb, Sm)TiO3THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING ABi2Ti2O7BUFFER LAYER," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(02), pages 211-215.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:02:n:s0218625x04006062
    DOI: 10.1142/S0218625X04006062
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