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STRUCTURAL PROPERTIES OFGaNFILMS GROWN ON THE6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$SUBSTRATE

Author

Listed:
  • X. Q. DAI

    (Physics Department, The University of Hong Kong, Hong Kong, China)

  • H. S. WU

    (Physics Department, The University of Hong Kong, Hong Kong, China)

  • S. H. XU

    (Physics Department, The University of Hong Kong, Hong Kong, China)

  • M. H. XIE

    (Physics Department, The University of Hong Kong, Hong Kong, China)

  • S. Y. TONG

    (Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China)

Abstract

Ab initiototal energy calculations are performed to determine the interface structure ofGaNfilms grown on the6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$substrate. The results show that theGaNfilm is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence ofGaNislands grown on stepped terraces of the6H-SiC(0001)surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped6H-SiC(0001)surface are discussed.

Suggested Citation

  • X. Q. Dai & H. S. Wu & S. H. Xu & M. H. Xie & S. Y. Tong, 2004. "STRUCTURAL PROPERTIES OFGaNFILMS GROWN ON THE6H-SiC(0001)$(\sqrt{3}\times \sqrt{3})R30^\circ$SUBSTRATE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(01), pages 1-6.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:01:n:s0218625x04005937
    DOI: 10.1142/S0218625X04005937
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