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DIRECT FABRICATION OF ORIENTEDMnSTHIN FILMS BY CHEMICAL BATH DEPOSITION

Author

Listed:
  • DONG BO FAN

    (The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China)

  • HAO WANG

    (The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China)

  • YONG CAI ZHANG

    (The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China)

  • JIE CHENG

    (The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China)

  • HUI YAN

    (The Key Laboratory of Advanced Functional Materials of Ministry of Education, Beijing University of Technology, Beijing 100022, China)

  • MASAHIRO YOSHIMURA

    (Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midoriku, Yokohama 226-8503, Japan)

Abstract

Oriented thin films of manganese sulfide(MnS)have been deposited by a simple chemical bath deposition (CBD) method, which was a soft solution-processing route for preparation of semiconductor thin films. By varying deposition conditions (e.g. bath temperature, concentration ratio ofMn2+ions toCH3–CS–NH2and concentration ratio ofMn2+ions toC6H5Na3O7), the effects of synthetic conditions on the properties of films were investigated. On the basis of experimental results, the synthetic conditions were optimized. The crystallinity and orientation of films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Using the optical absorption data, the optical band gap for theMnSfilms was determined to be 3.23 eV.

Suggested Citation

  • Dong Bo Fan & Hao Wang & Yong Cai Zhang & Jie Cheng & Hui Yan & Masahiro Yoshimura, 2004. "DIRECT FABRICATION OF ORIENTEDMnSTHIN FILMS BY CHEMICAL BATH DEPOSITION," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(01), pages 27-31.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:01:n:s0218625x04005895
    DOI: 10.1142/S0218625X04005895
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