IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v11y2004i01ns0218625x04005834.html
   My bibliography  Save this article

Ethylene Reactivity With Silicon Surface

Author

Listed:
  • M.-A. ZAÏBI

    (Faculté des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Tunisia)

  • J.-P. LACHARME

    (Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université Pierre et Marie Curie, 4 Place Jusssieu, 75252 Paris cedex 05, France)

Abstract

The cleanSi(111)(7×7)surface has been exposed to ethylene(C2H4)doses, up to 7000 L(1L=10-6Torr×1s)at most, under ultrahigh vacuum. The structural and electronic property changes of the surface have been studied by low energy electron diffraction (LEED), Auger electron spectrometry (AES) and photoemission yield spectroscopy (PYS). The interaction presents two types of kinetic adsorption, where the first is produced below 3000 L ofC2H4. In the first step, the ethylene molecule is adsorbed molecularly and the initial sticking coefficientS0is very low(S0≈2×10-3). At the saturation (≈ 5000–6000 L), the valence band is fitted by a power law(E — 4.42)2.5eV.1,2The surface is then a stronger scattering for photoemitted electrons. We attribute this result, produced at the second step of adsorption, to theC2H4-πorbital and hydrogen liberated by this molecule, which break theSi–Sisurface bonds.

Suggested Citation

  • M.-A. Zaïbi & J.-P. Lacharme, 2004. "Ethylene Reactivity With Silicon Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(01), pages 21-25.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:01:n:s0218625x04005834
    DOI: 10.1142/S0218625X04005834
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X04005834
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X04005834?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:11:y:2004:i:01:n:s0218625x04005834. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.