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Influence of the Plasma Condition on the Morphology of Vertically Aligned Carbon Nanotube Films Grown by RF Plasma Chemical Vapor Deposition

Author

Listed:
  • Takashi Ikuno

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Syunji Takahashi

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Kazunori Kamada

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Shigeharu Ohkura

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Shin-Ich Honda

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Mitsuhiro Katayama

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Takashi Hirao

    (Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

  • Kenjiro Oura

    (Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)

Abstract

Vertically aligned carbon nanotube (VACNT) films have been grown by RF plasma chemical vapor deposition (RF-PECVD) with a controlling plasma condition. From thein situoptical emission spectroscopy (OES) and self-bias measurements, we have investigated the relationship between the morphology of VACNTs and the plasma condition in PECVD. CH radical and atomic hydrogen peaks were prominent in the OES spectra ofCH4plasma. The plasma condition was changed by varying the interelectrode distance in PECVD. With increasing interelectrode distance, the diameter and density of VACNTs increased as a result of the increase in plasma density, the fraction of CH radicals, and self-bias. It is likely that the fraction of CH radicals in plasma influences promotion of the growth of CNTs, while the self-bias induces their vertical alignment.

Suggested Citation

  • Takashi Ikuno & Syunji Takahashi & Kazunori Kamada & Shigeharu Ohkura & Shin-Ich Honda & Mitsuhiro Katayama & Takashi Hirao & Kenjiro Oura, 2003. "Influence of the Plasma Condition on the Morphology of Vertically Aligned Carbon Nanotube Films Grown by RF Plasma Chemical Vapor Deposition," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(04), pages 611-615.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:04:n:s0218625x03005505
    DOI: 10.1142/S0218625X03005505
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