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Initial Stage ofCaF2/Si(111)Epitaxy Investigated by Lateral/Atomic Force Microscopy

Author

Listed:
  • C. R. Wang

    (Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany)

  • B. H. Müller

    (Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany)

  • K. R. Hofmann

    (Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany)

Abstract

The initial stages of the high temperature (~ 700°C) MBE growth ofCaF2on well-oriented Si(111) substrates have been studied by atomic force microscopy (AFM) and lateral force microscopy (LFM) in the atmosphere. At these temperaturesCaF2molecules react with the silicon surface and form aCaF1–Si interface layer. TheCaF1layer covers the silicon surface completely beforeCaF2islands start to form, and it is stable in the atmospheric environment for some days. The subsequent growth on this interface layer results in multilayerCaF2islands (about 5 TL in height). The friction force experienced by the Si tip was found to be larger on theCaF1interface layer than that on theCaF2layer and allows a direct distinction between theCaF1–Si interface layer andCaF2. Two different types of islands are observed. One has a regular shape with a flat top surface; the other has an irregular shape and exhibits a 0.3–0.6-nm-high corrugation. We suppose that the formation of disturbed islands can be attributed to the dissociation of theCaF1interface at the growth temperature of 700°C. These results suggest that high growth temperatures (> 600°C) do not always result in the bestCaF2film.

Suggested Citation

  • C. R. Wang & B. H. Müller & K. R. Hofmann, 2003. "Initial Stage ofCaF2/Si(111)Epitaxy Investigated by Lateral/Atomic Force Microscopy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(04), pages 605-610.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:04:n:s0218625x03005487
    DOI: 10.1142/S0218625X03005487
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