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Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

Author

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  • G. C. Chen

    (Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea)

  • S.-B. Lee

    (Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea)

  • J.-H. Boo

    (Department of Chemistry and Institute of Basic Science, Sungkyunkwun University, Suwon, 440-746, Korea)

Abstract

A new ternaryBOxNycrystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed thatBOxNycrystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure ofBOxNywas as similar to that ofH3BO3in this study.

Suggested Citation

  • G. C. Chen & S.-B. Lee & J.-H. Boo, 2003. "Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(04), pages 629-634.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:04:n:s0218625x03005475
    DOI: 10.1142/S0218625X03005475
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    Cited by:

    1. Barinova Vera, 2018. "Foreign experience in socially responsible business and feasibility of its implementation in Russia," Research Paper Series, Gaidar Institute for Economic Policy, issue 174P, pages 100-100.

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