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Influence of Substrate Miscut on the Island Formation Process inIn0.2Ga0.8As/GaAsMultilayers

Author

Listed:
  • E. Gartstein

    (Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel)

  • D. Mogilyanski

    (Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel)

  • D. Barlam

    (Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel)

Abstract

LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

Suggested Citation

  • E. Gartstein & D. Mogilyanski & D. Barlam, 2003. "Influence of Substrate Miscut on the Island Formation Process inIn0.2Ga0.8As/GaAsMultilayers," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(02n03), pages 263-270.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03005049
    DOI: 10.1142/S0218625X03005049
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