Author
Listed:
- Yuki Kimura
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Hiroshi Ueno
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Hitoshi Suzuki
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Takeshi Sato
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Toshiaki Tanigaki
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Osamu Kido
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Chihiro Kaito
(Department of Nanophysics in Frontier Project, Ritsumeikan University, Kusatsu-shi, Shiga 525-8577, Japan)
- Yoshio Saito
(Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan)
Abstract
In order to clarify the high-temperature behavior of a silicon oxide layer on the surface of Si ultrafine particles, the oxide layer has been studied using the atomic-resolution high-temperature stage of a transmission electron microscope. The natural oxide layer grown on Si ultrafine particles by exposure to air was an amorphous silicon oxide layer with a thickness of 1.5 nm. This oxide layer started to dissolve into the Si crystal upon heating at 500°C, and was fully dissolved into the Si crystal at 600°C in vacuum. When the specimen was cooled back to room temperature, the silicon oxide layer reappeared on the Si surface. This phenomenon, which can be detected only at high temperatures, is presented in this paper.
Suggested Citation
Yuki Kimura & Hiroshi Ueno & Hitoshi Suzuki & Takeshi Sato & Toshiaki Tanigaki & Osamu Kido & Chihiro Kaito & Yoshio Saito, 2003.
"Dynamic Behavior of a Silicon Oxide Layer on Silicon Ultrafine Particles,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(02n03), pages 361-364.
Handle:
RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03004986
DOI: 10.1142/S0218625X03004986
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