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Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements

Author

Listed:
  • Y. Takeda

    (Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)

  • M. Tabuchi

    (Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)

  • H. Amano

    (Department of Materials Science and Engineering, High Tech Research Center, Meijo University, 501, 1-chome, Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan)

  • I. Akasaki

    (Department of Materials Science and Engineering, High Tech Research Center, Meijo University, 501, 1-chome, Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan)

Abstract

Crystalline and morphological quality of low-temperature (LT)-deposited and annealed AlN and GaN thin layers were investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements and atomic force microscope (AFM) observation. It was revealed that the LT-AlN layer was more uniform in terms of the crystalline structure and the layer thickness than the LT-GaN layer, before and after annealing. It suggests that LT-AlN is more suitable as a buffer layer between sapphire substrate and GaN.

Suggested Citation

  • Y. Takeda & M. Tabuchi & H. Amano & I. Akasaki, 2003. "Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(02n03), pages 537-541.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:02n03:n:s0218625x03004810
    DOI: 10.1142/S0218625X03004810
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