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Modeling Of Surface Stress Of Semiconductors

Author

Listed:
  • Q. JIANG

    (Key Laboratory of Automobile Materials of the Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, P. R. China)

  • D. S. ZHAO

    (Key Laboratory of Automobile Materials of the Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, P. R. China)

  • M. ZHAO

    (Key Laboratory of Automobile Materials of the Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, P. R. China)

Abstract

A general equation for surface stress is established based on a thermodynamic consideration of the size dependence of solid–liquid interface energy under an assumption that the solid–liquid interface of a particle immersed in surrounding liquid disappears when almost all atoms of the particle are located on its surface. The predicted surface stresses of semiconductors in terms of the model are in agreement with the first principles calculations and calculations based on forces associated with the elastic distortion of the covalent bonds.

Suggested Citation

  • Q. Jiang & D. S. Zhao & M. Zhao, 2003. "Modeling Of Surface Stress Of Semiconductors," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(01), pages 49-53.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:01:n:s0218625x03004597
    DOI: 10.1142/S0218625X03004597
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