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DETERMINATION OF NANOMETER-SCALE SIZES INn+-TYPE POROUS SILICON BY THE USE OF X-RAY AND RAMAN SPECTROSCOPIES

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  • A. RAMÍREZ-PORRAS

    (Centro de Investigación en Ciencia e Ingeniería de Materiales and Escuela de Física, Universidad de Costa Rica, San Pedro 2060, Costa Rica)

Abstract

Porous silicon layers were obtained by electrochemical etching on (111) plane surfaces of crystalline phosphorus-doped silicon in the presence of hydrofluoric acid. The photoluminescence of this kind of layers when illuminated with UV light is possibly explained by the quantum confinement model (QCM), which states the presence of nanometer-scale crystallites that enlarge the semiconductor band gap up to optical photon energies when the band-to-band recombination processes take place. In this study, the size determination of those proposed structures was performed by X-ray diffractiometry and by Raman spectroscopy. The obtained results suggest a consistency between the experimental work and the QCM.

Suggested Citation

  • A. Ramírez-Porras, 2002. "DETERMINATION OF NANOMETER-SCALE SIZES INn+-TYPE POROUS SILICON BY THE USE OF X-RAY AND RAMAN SPECTROSCOPIES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1769-1772.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004384
    DOI: 10.1142/S0218625X02004384
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