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BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)AsQUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

Author

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  • A. MONTES

    (Instituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia)

  • A. L. MORALES

    (Instituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia)

  • C. A. DUQUE

    (Instituto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia)

Abstract

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities inGaAs–Ga1 - xAlxAsquantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

Suggested Citation

  • A. Montes & A. L. Morales & C. A. Duque, 2002. "BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)AsQUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1753-1756.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004347
    DOI: 10.1142/S0218625X02004347
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