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STUDY OFAl0.065Ga0.935SbAVALANCHE PHOTODETECTORS FOR1.55 μmOF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE

Author

Listed:
  • J. MARTÍNEZ-JUÁREZ

    (Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico)

  • J. OLVERA

    (Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico)

  • T. DÍAZ

    (Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico)

  • F. DE ANDA

    (Instituto de Investigación en Comunicación Óptica – UASLP, SLP, Mexico)

  • A. ESCOBOSA

    (SEES, Ingeniería Eléctrica – CINVESTAV, DF, Mexico)

Abstract

We report the results of a study ofAl0.065Ga0.935Sbavalanche photodetectors grown on n-GaSb substrates. The devices have been fabricated from layers with the structurep-Al0.13Ga0.87Sb/n-Al0.065Ga0.935Sb:Te/n-GaSb(substrate) grown by liquid phase epitaxy (LPE) with a composition matched to detect light of 1.55 μm. The heterostructures were grown from Ga-rich solutions at 400°C. Just after their growth, the structures were subjected to baking processes inside the growth chamber. The baking time was varied and its influence on the breakdown voltages of the junctions was observed. Breakdown voltages up to 12 V, very low net donor concentration in the active layer(1E15cm-3), and avalanche multiplication factors of around 50 have been obtained. The carrier concentration was determined by the C–V method. Photoluminescence and X-ray diffraction measurements were carried out to investigate the properties of the LPE-grown ternary layers, to determine the band gap and to estimate the quality of epitaxial layers. The photoresponses of the detectors are also presented.

Suggested Citation

  • J. Martínez-Juárez & J. Olvera & T. Díaz & F. De Anda & A. Escobosa, 2002. "STUDY OFAl0.065Ga0.935SbAVALANCHE PHOTODETECTORS FOR1.55 μmOF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1741-1745.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004323
    DOI: 10.1142/S0218625X02004323
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