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CHARGE TRAPPING IN SOL–GEL-DERIVED COATINGS ON SiWAFERS

Author

Listed:
  • T. DIAZ

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

  • H. JUÁREZ

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

  • M. CUAMATZI

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

  • J. OLVERA

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

  • J. MARTINEZ

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

  • R. JUÁREZ

    (Centro de Investigaciones en Dispositivos Semiconductores, ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla 72000, Puebla, Mexico)

Abstract

Sol–gel techniques are particularly useful for the formation of thin oxide films on various substrates, which can be important for many technological applications. In microelectronic technology these films can be used as passivation layers, diffusion and oxidation barriers, intermetal dielectrics (IMD) and so on. Sol–gel-derived oxides are obtained from tetraethoxysilane, which is used as precursor and a two-step process involving acid catalysts. Varying the composition of the sol–gel solution, optical and electrical properties of the resulted films can be changed. In the present work, HF andHNO3were used as catalyst in order to vary the electrical properties of the films. Oxides were deposited on Si substrates and MIS (metal–insulator–semiconductor) structures were fabricated. Electrical properties of the coatings were studied by the C–V (capacitance–voltage) method. Fourier transform infrared spectroscopy (FTIR) measurements ware employed to investigate the chemical bonding structure. The results show evidence of the existence of charge trapping in theTEOS/HNO3films when MIS capacitors are biased from accumulation to inversion condition. This fact can be applied in the semiconductor device technology.

Suggested Citation

  • T. Diaz & H. Juárez & M. Cuamatzi & J. Olvera & J. Martinez & R. Juárez, 2002. "CHARGE TRAPPING IN SOL–GEL-DERIVED COATINGS ON SiWAFERS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1715-1720.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x0200427x
    DOI: 10.1142/S0218625X0200427X
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