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A STUDY OF THE ELECTRICAL PROPERTIES OFAl2O3FILMS DEPOSITED ON GaAsSUBSTRATES BY SPRAY PYROLYSIS

Author

Listed:
  • J. CHAVEZ-RAMIREZ

    (Facultad de Qumica, UNAM, Coyoacn 04510, Mexico DF, Mexico)

  • M. AGUILAR-FRUTIS

    (CICATA, IPN, Miguel Hidalgo 11500, Mexico DF, Mexico)

  • M. GARCIA

    (Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico)

  • E. MARTINEZ

    (Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico)

  • O. ALVAREZ-FREGOSO

    (Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico)

  • S. LOPEZ

    (Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico)

  • G. BURILLO

    (ICN, UNAM, Coyoacn 04510, Mexico DF, Mexico)

  • C. FALCONY

    (Departamento de Fisica, CINVESTAV-IPN, Mexico DF, Mexico)

Abstract

Electrical characteristics of high quality aluminum oxide thin films deposited by the spray pyrolysis technique on GaAs substrates are reported. The films were deposited using a spraying solution of aluminum acetylacetonate in N,N-dimethylformamide and an ultrasonic mist generator. The substrates were (100) GaAs wafers Si-doped(1018cm-3). The substrate temperature during deposition was in the range of 300–600°C. The electrical characteristics of these films were determined by capacitance and current versus voltage measurements by the incorporation of these films into metal-oxide-semiconductor structures. The interface state density resulted in the order of10121/eV-cm2and the films can stand electric fields higher than 5 MV/cm, without observing a destructive dielectric breakdown. The refractive index, measured by ellipsometry at 633 nm, resulted close to 1.64. The determination of the chemical composition of the films was achieved by energy dispersive X-ray spectroscopy; it resulted close to that of stoichiometric aluminum oxide (O/Al = 1.5) when films are deposited at substrate temperatures of 300–350°C.

Suggested Citation

  • J. Chavez-Ramirez & M. Aguilar-Frutis & M. Garcia & E. Martinez & O. Alvarez-Fregoso & S. Lopez & G. Burillo & C. Falcony, 2002. "A STUDY OF THE ELECTRICAL PROPERTIES OFAl2O3FILMS DEPOSITED ON GaAsSUBSTRATES BY SPRAY PYROLYSIS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1637-1640.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004128
    DOI: 10.1142/S0218625X02004128
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