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Critical Exponent Measurement Of Poor Quality Diamond Films

Author

Listed:
  • M. C. SALVADORI

    (Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil)

  • L. L. MELO

    (Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil)

  • D. R. MARTINS

    (Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil)

  • A. R. VAZ

    (Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil)

  • M. CATTANI

    (Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil)

Abstract

We have synthesized poor quality diamond films, using high methane concentretion, by plasma-assisted chemical vapor deposition on silicon substrates. The roughness and dynamic critical exponents, α and β, of these films have been measured using an atomic force microscope. We show that the morphology, the roughness and the critical exponents of the diamond films are significantly different from those obtained with a low methane concentration. Our results are compared with Kardar–Parisi–Zhang theoretical predictions.

Suggested Citation

  • M. C. Salvadori & L. L. Melo & D. R. Martins & A. R. Vaz & M. Cattani, 2002. "Critical Exponent Measurement Of Poor Quality Diamond Films," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(03n04), pages 1409-1412.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:03n04:n:s0218625x02004037
    DOI: 10.1142/S0218625X02004037
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    Keywords

    Diamond films; critical exponents;

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