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LOW TEMPERATURE STUDIES OF THE DIELECTRIC AND ELECTRICAL PARAMETERS OF GLASSYSe90Ge10-xInx

Author

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  • S. ABOU EL-HASSAN

    (Physics Department, Faculty of Science, Benha, Egypt)

Abstract

The dielectric properties of the systemSe90Ge10-xInx(x = 2, 4 and 6 at. %) were studied in the temperature range of 78–273 K and in the frequency range of 400 Hz–20 kHz. The density of localized statesN(E)and the activation energy of hoppingwkfor the samples were deduced at different temperatures. The exponentss,m1andm2of the equationsσac(ω) = Aωs,ε′ = Bωm1andε′′ = Cωm2have been deduced for the samples. The composition and temperature dependence ofs,m1,m2,wkandN(E)have been determined. The results are interpreted in terms of the correlated barrier hopping (CBH) model and the concept of localized states.

Suggested Citation

  • S. Abou El-Hassan, 2002. "LOW TEMPERATURE STUDIES OF THE DIELECTRIC AND ELECTRICAL PARAMETERS OF GLASSYSe90Ge10-xInx," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(03n04), pages 1379-1385.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:03n04:n:s0218625x0200386x
    DOI: 10.1142/S0218625X0200386X
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