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SURFACE-PHOTOVOLTAGE EFFECT IN A GaAs–GaAsP SUPERLATTICE STUDIED WITH COMBINATION OF SYNCHROTRON RADIATION AND THE LASER

Author

Listed:
  • SENKU TANAKA

    (School of Mathematical and Physical Science, The Graduate University for Advanced Studies, Okazaki, 444-8585, Japan)

  • SAM D. MORÉ

    (UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan)

  • KAZUTOSHI TAKAHASHI

    (UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan)

  • MASAO KAMADA

    (UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan)

  • TOMOHIRO NISHITANI

    (Department of Physics, Nagoya University, Nagoya, 464-8602, Japan)

  • TSUTOMU NAKANISHI

    (Department of Physics, Nagoya University, Nagoya, 464-8602, Japan)

Abstract

Core-level photoelectron spectroscopy with the combination of synchrotron radiation (SR) and a laser was used for exploring the surface-photovoltage (SPV) effect and its temporal profiles in a GaAs–GaAsP superlattice (SL). It was observed that the SPV value in the SL is suppressed as compared with a bulk GaAs. However, no significant difference was found in the temporal profile between the bulk and the SL. It is suggested that the suppression of the SPV in the SL is dominantly due to the small value of band bending under thermal equilibrium.

Suggested Citation

  • Senku Tanaka & Sam D. Moré & Kazutoshi Takahashi & Masao Kamada & Tomohiro Nishitani & Tsutomu Nakanishi, 2002. "SURFACE-PHOTOVOLTAGE EFFECT IN A GaAs–GaAsP SUPERLATTICE STUDIED WITH COMBINATION OF SYNCHROTRON RADIATION AND THE LASER," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 1297-1301.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02003573
    DOI: 10.1142/S0218625X02003573
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