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HIGH-RESOLUTION Si2pCORE-LEVEL STUDY OF THEK/Si(111)-(3 × 1)SURFACE

Author

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  • KAZUYUKI SAKAMOTO

    (Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden)

  • H. M. ZHANG

    (Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden)

  • ROGER I. G. UHRBERG

    (Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden)

Abstract

The structure of theK/Si(111)-(3 × 1)surface was studied by high-resolution core-level photoelectron spectroscopy. Five surface components were observed in the Si2pcore-level spectra. Compared to the bulk component, three components are shifted to lower and two to higher binding energies. The two components with the lowest binding energies are assigned to the top-layer Si atoms bonded to the K atoms with different configurations. The component with highest binding energy has a contribution from the π-bonded Si atoms of the top layer. The two other components originate from the Si atoms of the second and third layers.

Suggested Citation

  • Kazuyuki Sakamoto & H. M. Zhang & Roger I. G. Uhrberg, 2002. "HIGH-RESOLUTION Si2pCORE-LEVEL STUDY OF THEK/Si(111)-(3 × 1)SURFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 1235-1239.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02003561
    DOI: 10.1142/S0218625X02003561
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