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Ce4fSTATES INCePd2Si2ANDCeNi2Si2INVESTIGATED BY RESONANT PHOTOEMISSION SPECTROSCOPY

Author

Listed:
  • K. MIMURA

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • Y. OKABAYASHI

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • H. MIZOHATA

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • D. SAKIYAMA

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • O. SAKAI

    (Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan)

  • D. HUO

    (Department of Physics, Toyama University, Toyama 930-8555, Japan)

  • J. SAKURAI

    (Department of Physics, Toyama University, Toyama 930-8555, Japan)

  • Y. TAGUCHI

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • K. ICHIKAWA

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

  • O. AITA

    (Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai 599-8531, Japan)

Abstract

Ce4felectronic states in an antiferromagnetic Kondo compoundCePd2Si2and a strong intermediate-valence compoundCeNi2Si2have been investigated by means of high-resolution Ce4d–4fresonant photoemission spectroscopy at 12 K. The relative intensity of thef5/21tof7/21final state in the Ce4fspectrum forCeNi2Si2is stronger than the relative intensity forCePd2Si2, indicating that the intensity of Kondo resonance scales the Kondo temperature since the Ce4fspectrum near the Fermi level dominantly reflects the bulk component. Both Ce4fspectra have been well fitted by the spectral calculations based on a single impurity Anderson model with consideration of the bulk and surface components. Our present calculation indicates that the model is applicable to the analyses of the Ce4fspectra of the weakly and strongly hybridized systems.

Suggested Citation

  • K. Mimura & Y. Okabayashi & H. Mizohata & D. Sakiyama & O. Sakai & D. Huo & J. Sakurai & Y. Taguchi & K. Ichikawa & O. Aita, 2002. "Ce4fSTATES INCePd2Si2ANDCeNi2Si2INVESTIGATED BY RESONANT PHOTOEMISSION SPECTROSCOPY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 1035-1039.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02003305
    DOI: 10.1142/S0218625X02003305
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