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BURIED INTERFACES OF HEAT-LOADED Mo/SiMULTILAYERS STUDIED BY SOFT-X-RAY EMISSION SPECTROSCOPY

Author

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  • N. MIYATA

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

  • T. IMAZONO

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

  • S. ISHIKAWA

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

  • A. ARAI

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

  • M. YANAGIHARA

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

  • M. WATANABE

    (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)

Abstract

We measured SiL2,3soft-X-ray emission spectra from Mo/Si multilayers annealed at 400°C. We showed thatMoSi2was formed at the interface, and the thickness of theMoSi2interlayer increased with the annealing time. By an analysis of the soft-X-ray emission spectra and the patterns of small-angle X-ray diffraction, we estimated the thickness of theMoSi2interlayer and a diffusion coefficient between Mo and Si at 400°C as1.1 (± 0.2) × 10-18cm2/s. We showed that soft-X-ray emission spectroscopy is a useful tool for studying the thermal change of the buried interface nondestructively.

Suggested Citation

  • N. Miyata & T. Imazono & S. Ishikawa & A. Arai & M. Yanagihara & M. Watanabe, 2002. "BURIED INTERFACES OF HEAT-LOADED Mo/SiMULTILAYERS STUDIED BY SOFT-X-RAY EMISSION SPECTROSCOPY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 663-667.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x0200283x
    DOI: 10.1142/S0218625X0200283X
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