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TEMPERATURE EVOLUTION OF THE PHOTOEMISSION SPECTRA FOR THE Si(111) SURFACE USING THE LASER ANNEALING METHOD

Author

Listed:
  • YUICHI HARUYAMA

    (Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan)

  • SHINJI MATSUI

    (Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan)

  • TAICHI OKUDA

    (Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan)

  • AYUMI HARASAWA

    (Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan)

  • TOYOHIKO KINOSHITA

    (Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan)

  • SHIN-ICHIRO TANAKA

    (Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8602, Japan)

  • HIDEO MAKINO

    (Silicon Technology LTD, 897-20 Kyowa, Mochizuki, Kitasaku-gun, Nagano 384-2204, Japan)

  • KATSUO WADA

    (Silicon Technology LTD, 897-20 Kyowa, Mochizuki, Kitasaku-gun, Nagano 384-2204, Japan)

Abstract

We have studied the electronic structures in a wide temperature range for the Si(111) surface using photoemission spectroscopy combined with the laser annealing method. The temperature dependence of the Si2psurface-sensitive core level photoemission spectra shows some gradual changes along with the thermal broadening above ~1063 K. In addition, the spectral change in the valence band photoemission spectra was also observed across the7 × 7–1 × 1transition temperature. These results indicate that the surface band structure is changed along with structural change at the7 × 7–1 × 1transition temperature. With increase of the temperature, the shift of the Si2pcore-level photoemission spectra to the lower binding energy side was observed. We discuss the temperature-induced effects such as the thermal broadening and the observed shift.

Suggested Citation

  • Yuichi Haruyama & Shinji Matsui & Taichi Okuda & Ayumi Harasawa & Toyohiko Kinoshita & Shin-Ichiro Tanaka & Hideo Makino & Katsuo Wada, 2002. "TEMPERATURE EVOLUTION OF THE PHOTOEMISSION SPECTRA FOR THE Si(111) SURFACE USING THE LASER ANNEALING METHOD," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 769-774.
  • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x02002737
    DOI: 10.1142/S0218625X02002737
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