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Temperature Dependence Of Laser-Induced Hot Luminescence Of Self-Trapped Excitons In Solid Xenon

Author

Listed:
  • M. SELG

    (Institute of Physics, University of Tartu, Riia 142, Tartu 51014, Estonia)

  • M. KINK

    (Institute of Physics, University of Tartu, Riia 142, Tartu 51014, Estonia)

  • R. KINK

    (Institute of Physics, University of Tartu, Riia 142, Tartu 51014, Estonia)

  • J. MAKSIMOV

    (Institute of Physics, University of Tartu, Riia 142, Tartu 51014, Estonia)

  • I. MARTINSON

    (University of Lund, Professorgatan 1, Lund S22362, Sweden)

Abstract

Hot luminescence of self-trapped excitons in solid xenon has been investigated in a wide temperature range (from LHeT to 100 K), using X-ray and two-photon excimer laser (ArF and KrF) excitation. Hot luminescence of bulk Xe crystals of volume2cm3appears to be very sensitive to both the temperature and the quality of the samples, while its highest intensity has been registered under KrF laser excitation. The experimental results are in good accordance with a recent nonperturbative quantum relaxation theory of strong local vibrational excitations.

Suggested Citation

  • M. Selg & M. Kink & R. Kink & J. Maksimov & I. Martinson, 2002. "Temperature Dependence Of Laser-Induced Hot Luminescence Of Self-Trapped Excitons In Solid Xenon," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 609-613.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002713
    DOI: 10.1142/S0218625X02002713
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