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DEPTH-RESOLVED SOFT X-RAY EMISSION SPECTROSCOPY OF Si-BASED MATERIALS

Author

Listed:
  • A. V. ZIMINA

    (Institute of Physics, Saint-Petersburg State University, Ulianovskaya str. 1, 198904, Saint-Petersburg, Russia)

  • A. S. SHULAKOV

    (Institute of Physics, Saint-Petersburg State University, Ulianovskaya str. 1, 198904, Saint-Petersburg, Russia)

  • S. EISEBITT

    (IFF, Forschungszentrum Juelich, D-52425, Juelich, Germany)

  • W. EBERHARDT

    (IFF, Forschungszentrum Juelich, D-52425, Juelich, Germany)

Abstract

We discuss a soft X-ray emission (SXE) valence band (VB) spectroscopy method for the study of the electronic structure and chemical phase composition of solids in a near-surface region with depth resolution. The depth information is obtained by variation of the energy of the incident electron beam used to excite the SXE spectra. As the information depth can be varied from about 1 nm to 1 μm in silicon, this method is suitable for the investigation of materials of modern micro- and nanoelectronics. VB → core level (Si 2p or Al 2p) transitions in Si-based materials are used to demonstrate the technique. It was found that the contribution of the signal from the near-surface region (

Suggested Citation

  • A. V. Zimina & A. S. Shulakov & S. Eisebitt & W. Eberhardt, 2002. "DEPTH-RESOLVED SOFT X-RAY EMISSION SPECTROSCOPY OF Si-BASED MATERIALS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 461-467.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002464
    DOI: 10.1142/S0218625X02002464
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