X-Ray Absorption Near Edge Structure Investigations Of Group Iii Nitrides And Nitrided Aiii-Bv Semiconductor Surfaces — Feff Calculations And Electron Yield Measurements

Multiple scattering calculations using the FEFF-8 code were applied to simulate the X-ray absorption spectra recorded at the nitrogen K edge of III-N compounds. The major features of experimental N K XANES, including polarization effects, are well reproduced by the calculations, as is demonstrated for GaN. Further, FEFF calculations have been performed to investigate N bombardment-induced defects in III-V semiconductor surface layers. Recently reported nitrogen ion bombardment-induced spectral features of the N K absorption edge may be related to implanted nitrogen molecules by comparing experimental and calculated N K XANES.