IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v08y2001i06ns0218625x01001646.html
   My bibliography  Save this article

Afm Studies Of Various Niobium And Aluminium Thin Films For Their Use In Josephson Junctions

Author

Listed:
  • SHAHZAD NASEEM

    (Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK)

Abstract

Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers ofNb/AlOx/Nbare intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated withRrmsvalues of 3.5 and 4.0 nm respectively. Al thin films have a very smooth surface, with anRrmsvalue of only 0.9 nm. Consequently, UHV-evaporated Nb thin films deposited on top of Al thin films are smoother, with a surface roughness of 1.8 nm.

Suggested Citation

  • Shahzad Naseem, 2001. "Afm Studies Of Various Niobium And Aluminium Thin Films For Their Use In Josephson Junctions," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(06), pages 689-692.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:06:n:s0218625x01001646
    DOI: 10.1142/S0218625X01001646
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X01001646
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X01001646?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:08:y:2001:i:06:n:s0218625x01001646. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.