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EFFECT OF TEMPERATURE ONNH3REACTIVITY WITHSi(100)2×1

Author

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  • M. A. ZAÏBI

    (Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France)

  • C. A. SÉBENNE

    (Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France)

  • J. P. LACHARME

    (Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France)

Abstract

Initially clean, (2 × 1)-reconstructed Si(100) surfaces were exposed toNH3, until saturation, at sequentially increased temperatures of up to 600°C. The resulting surfaces have been studied by low energy electron diffraction (LEED) and by photoemission yield and Auger electron spectrometries (PYS and AES). The room temperature saturation — for whichNH3is adsorbed in a dissociated form asNH2and H, either of them bonded to a single Si dimer — remains essentially unchanged up to 250°C. Beyond 250°C, NH radicals form and replace the Si dimers by flat Si–NH–Si bridges along the surface, which ends up being stabilized by a full monolayer of such bridges at 400–450°C. Beyond that starts the actual nitridation process which concerns deeper Si layers.

Suggested Citation

  • M. A. Zaïbi & C. A. Sébenne & J. P. Lacharme, 2001. "EFFECT OF TEMPERATURE ONNH3REACTIVITY WITHSi(100)2×1," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(06), pages 621-626.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:06:n:s0218625x01001579
    DOI: 10.1142/S0218625X01001579
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    ; 79.60.Dp–68.45.Da–68.35.Dv;

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