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INTERFACIAL PROPERTY OF THE PSEUDOMORPHICInGaAs/AlGaAsMULTIPLE QUANTUM WELLS

Author

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  • D. H. ZHANG

    (School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore)

Abstract

The effects of Be doping in the wells of the p-type pseudomorphicInGaAs/AlGaAsmultiple quantum wells were characterized using photoluminescence and X-ray diffraction techniques. It is found that high doping in the wells causes shift of energy levels and deteriorates the well–barrier interfaces of the quantum well structures. The shift of the energy levels is mainly due to the band gap shrinkage while the interface roughness can be explained by interstitial doping.

Suggested Citation

  • D. H. Zhang, 2001. "INTERFACIAL PROPERTY OF THE PSEUDOMORPHICInGaAs/AlGaAsMULTIPLE QUANTUM WELLS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(05), pages 537-540.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:05:n:s0218625x01001415
    DOI: 10.1142/S0218625X01001415
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