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A STUDY ON ELECTROLUMINESCENCE FROMAu/Ge-CONTAINING SILICON OXIDE/p-SiANDAu/Si-RICH SILICON OXIDE/p-SiSTRUCTURES

Author

Listed:
  • S. Y. MA

    (Department of Physics, Northwest Normal University, Lanzhou 730070, China)

  • Y. P. GUO

    (Department of Physics, National University of Singapore, Singapore 119260, Singapore)

  • Y. Y. WANG

    (Department of Physics, Lanzhou University, Lanzhou 730000, China)

  • X. Q. LIU

    (Department of Physics, Lanzhou University, Lanzhou 730000, China)

Abstract

Ge-containing silicon oxide (GSO) films (5–15 nm) and Si-rich silicon oxide (SSO) films (5–15 nm) were deposited using the RF magnetron sputtering technique with aGe–SiO2and aSi–SiO2composite target, respectively. TheAu/GSO/p-SiandAu/SSO/p-Sistructures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both of theAu/GSO/p-SiandAu/SSO/p-Sistructures have rectifying behavior. All the EL spectra from the two types of the structure have almost unchanged peak positions around 650 nm (~1.9 eV) and are independent of applied forward biases. The EL mechanisms for theAu/GSO/p-SiandAu/SSO/p-Sistructures have been discussed.

Suggested Citation

  • S. Y. Ma & Y. P. Guo & Y. Y. Wang & X. Q. Liu, 2001. "A STUDY ON ELECTROLUMINESCENCE FROMAu/Ge-CONTAINING SILICON OXIDE/p-SiANDAu/Si-RICH SILICON OXIDE/p-SiSTRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(05), pages 483-486.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:05:n:s0218625x01001361
    DOI: 10.1142/S0218625X01001361
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