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LOW ENERGY ELECTRON MICROSCOPY STUDIES OF THE GROWTH OF GaN ON 6H–SiC(0001)

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  • A. PAVLOVSKA

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

  • E. BAUER

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

Abstract

The experimental possibilities and limitations of the study of the MRE growth of GaN on 6H-SiC(0001) in a low energy electron microscope are discussed. Results illustrating these possibilities and limitations are presented. We disagree with the interpretation given in a recent report on some of the results. In this paper, we present our own interpretation of the experimental data and provide the reasons why the earlier interpretation is incorrect.

Suggested Citation

  • A. Pavlovska & E. Bauer, 2001. "LOW ENERGY ELECTRON MICROSCOPY STUDIES OF THE GROWTH OF GaN ON 6H–SiC(0001)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 8(03n04), pages 337-346.
    • Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001154
    DOI: 10.1142/S0218625X01001154
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